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Deadline for Submission of Abstracts
Abstract Acceptance Notification
Deadline for Early Bird Registration
|State Key Laboratory of Crystal Materials|
The 8th Asia-Pacific Workshop on Widegap Semiconductors (APWS2017) will be held in Qingdao, Shandong, China, following a series of biennial workshops organized in Awajishima (Japan, 2003), Hsinchu (Taiwan, 2005), Jeonju (Korea, 2007), Zhangjiajie (China, 2009), Toba (Japan, 2011), Tamsui (Taiwan, 2013), Seoul (Korea, 2015).
Scope of Workshop
The Workshop aims to be a forum for presenting state of the art results and latest advances in research and technology of wide bandgap semiconductors. The format of the workshop provides invited and contributed presentations in plenary sessions during the four days of the meeting in Qingdao, a beautiful city with sea and mountains. The workshop will be a conference sharing the information among all participants, and memorable experience in Qingdao, China.
Format of Workshop
The workshop consists of the invited and contributed oral presentations, as well as the poster presentations. Those who want to contribute to and/or are interested in this workshop are encouraged to contact in advance to any committee members of this workshop.
APWS 2017 focuses on material and device study of wide bandgap semiconductors including III-nitrides, SiC, diamond, oxide-based materials and so forth. The conference will address advances in both basic research, as well as technology of the research field. For the former, the aim of the conference is to discuss the latest progress in basic research issues such as theoretical and experimental investigations of crystal growth, characterization, control of material properties, novel devices, as well as other research issues of wide bandgap semiconductor materials. For the latter, the ambition of the conference is to debate new research results related to wafer production processes, device fabrication technologies, device applications, and to analyze their global impact on the development and commercialization of advanced devices and circuits for solid-state lighting, energy saving, high frequency, high power and high temperature applications.
Topics include but are not limited to：
- Material growth: bulk crystals, epitaxial growth, doping, low-dimensional system;
- Characterizations: defects, optical and electrical properties, surface and interface properties;
- Optical devices: LEDs, LDs, photodetectors, photovoltaics, intersubband devices;
- Electronic devices: power switching, RF power, high-temperature and radiation-resistant devices;Theory and simulation: basic material properties, device design and modeling, thermal analysis;
- New WBG materials and devices: diamond, BN, Ga2O3, spintronics, bio- and chemical devices.